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[한국전자통신연구원] 극한 환경용 반도체 기술 동향
테크포럼
2019-01-09 11:28:02

Ⅰ. 서론 
Ⅱ. 극한 환경용 반도체 기술 동향 
Ⅲ. 결론 


초록
In this paper, we review the technical trends of diamond and gallium oxide (Ga2O3) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. Ga2O3 also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, Ga2O3 bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of Ga2O3 bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and Ga2O3 semiconductor devices and epitaxy results that can be applied to harsh environments. are currently under development. Owing to the rapid development of Ga2O3 bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and Ga2O3 semiconductor devices and epitaxy results that can be applied to harsh environments.

 

 

 

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